KTA501E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in h_FE.
The follwing characteristics are common for Q₁, Q₂.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
T_stg
RATING
-50
-50
-5
-150
-30
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTA501E
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q₁ BASE
2. Q₁, Q ₂ EMITTER
3. Q ₂ BASE
4. Q ₂ COLLECTOR
5. Q₁ COLLECTOR
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q1
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=-6V, I_C=-2
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-100 , I_B=-10
Transition Frequency
f_T
V_CE=-10V, I_C=-1
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1
Noise Figure
NF
V_CE=-6V, I_C=-0.1 , f=1 , Rg=10
Note : h_FE Classification Y(4):120 240, GR(6):200 400
Marking
5
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
MAX.
-0.1
-0.1
400
-0.30
-
7
10
Type Name
4
UNIT.
V
S
h_FE Rank
2003. 2. 25
Revision No : 2
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