KTA2400_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
DIFFERENTIAL AMP. APPLICATION.
FEATURES
hMatched Pairs for Differential Amplifiers.
hHigh Breakdown Voltage : V_CEO=-120V(Min.).
hLow Noise : NF=1dB(Typ.), 10dB(Max.).
hComplementary to KTC3400.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Emitter Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-120
-120
-5
-100
100
625
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTA2400
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-120V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
Collector-Emitter Breakdown Voltage V_(BR)CEO I_C=-1mA, I_B=0
DC Current Gain
h_FE (Note) V_CE=-6V, I_C=-2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-10mA, I_B=-1mA
Transition Frequency
f_T
V_CE=-6V, I_C=-1mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Noise Figure
NF
V_CE=-6V, I_C=-0.1mA, f=1kHz, Rg=10kʃ
Note : h_FE Classification G¤:200q400, In case of G¤, ¤:A to G, GR: 200~400
MIN.
-
-
-120
200
-
-
-
-
TYP.
-
-
-
-
-
100
4.0
1.0
MAX.
-100
-100
-
400
-0.3
-
-
10
UNIT
nA
nA
V
V
MHz
pF
dB
h_FE Classification
GA
GB
GC
GD
h_FE
200q220
220q250
250q280
280q310
h_FE Classification
GE
GF
GG
h_FE
310q340
340q370
370q400
2001. 9. 7
Revision No : 1
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