KTA2014V_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC4075V.
Very Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
-50
-50
-5
-150
-30
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTA2014V
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
S
Type Name
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=-6V, I_C=-2mA
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=-100mA, I_B=-10mA
Transition Frequency
f_T
V_CE=-10V, I_C=-1mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Noise Figure
V_CE=-6V, I_C=-0.1mA
NF
f=1kHz, Rg=10k
Note : h_FE Classification O(2):70 140, Y(4):120 240, GR(6):200 400
MIN.
-
-
70
-
80
-
TYP.
-
-
-
-0.1
-
4
MAX.
-0.1
-0.1
400
-0.3
-
7
UNIT
A
A
V
MHz
pF
-
1.0
10
dB
2001. 7. 20
Revision No : 0
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