KTA2013F Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).
hHigh h_FE : h_FE=120~400.
hComplementary to KTC4074F.
hThin Fine Pitch Small Package.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V_CBO
V_CEO
V_EBO
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-20
-20
-5
-150
-30
50
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTA2013F
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
2
DIM MILLIMETERS
A
0.6+_ 0.05
3
B
0.8 +_ 0.05
1
C 0.38+0.02/-0.04
D
0.2 +_ 0.05
E
1.0+_ 0.05
G
0.35+_ 0.05
J
0.1+_ 0.05
K
0.15+_ 0.05
1. EMITTER
2. BASE
3. COLLECTOR
TFSM
Marking
Type Name
F
h_FE Rank
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE (Note)
V_CE(sat)
f_T
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-5V, I_C=-2mA
I_C=-100mA, I_B=-10mA
V_CE=-10V, I_C=-1mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification Y(4):120q240, GR(6):200q400
MIN.
-
-
120
-
80
-
TYP.
-
-
-
-0.1
-
4
MAX.
-0.1
-0.1
400
-0.3
-
7
UNIT
ǺA
ǺA
V
MHz
pF
2005. 4. 21
Revision No : 1
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