KTA2012E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES
ᴌA Collector Current is Large.
ᴌCollector Saturation Voltage is low.
: V_CE(sat)á´ª-250mV at I_C=-200mA/I_B=-10mA.
ᴌComplementary to KTC4072E.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP *
P_C
T_j
T_stg
RATING
-15
-12
-6
-500
-1
100
150
-55ᴕ150
UNIT
V
V
V
mA
A
mW
á´±
á´±
KTA2012E
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
1.60+_ 0.10
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. EMITTER
2. BASE
3. COLLECTOR
ESM
Marking
Type Name
SZ
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE
V_CE(sat)
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=-15V, I_E=0
I_C=-10ỌA
I_C=-1mA
I_E=-10ỌA
V_CE=-2V, I_C=-10mA
I_C=-200mA, I_B=-10mA
V_CE=-2V, I_C=-10mA, f_T=100MHz
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-15
-12
-6
270
-
-
-
TYP.
-
-
-
-
-
-100
260
6.5
MAX.
-100
-
-
-
680
-250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
2002. 2. 20
Revision No : 1
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