KTA1834D_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FEATURES
hLow Collector Saturation Voltage.
: V_CE(sat)=0.16V(Typ.) at (I_C=-4A, I_B=-0.05A)
hLarge Collector Current
: I_C=-10A(dc) I_C=-15A(10ms, single pulse)
hComplementary to KTC5001D/L.
KTA1834D/L
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-30
-20
-6
-10
-15
-2
1.0
10
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
I_CBO
I_EBO
BV_CBO
Collector-Emitter Breakdown Voltage
BV_CEO
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
BV_EBO
h_FE (1) (Note)
h_FE (2)
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification GR:180~390.
TEST CONDITION
V_CB=-20V
V_EB=-5V
I_C=-50ǺA
I_C=-1mA
I_E=-50ǺA
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-4.0A
I_C=-4.0A, I_B=-0.05A
I_C=-4A, I_B=-0.05A
V_CE=-5V, I_E=1.5A, f=50MHz
V_CB=-10V, I_E=0, f=1MHz
2003. 3. 27
Revision No : 5
MIN.
-
-
-30
-20
-6
180
82
-
-
-
-
TYP.
-
-
-
-
-0.16
-0.9
150
220
MAX.
-10
-10
390
-
-0.25
-1.2
-
-
UNIT
ǺA
ǺA
V
V
V
V
V
MHz
pF
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