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KTA1834D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
KTA1834D/L
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
Low Collector Saturation Voltage.
: VCE(sat)=0.16V(Typ.) at (IC=-4A, IB=-0.05A)
Large Collector Current
: IC=-10A(dc) IC=-15A(10ms, single pulse)
Complementary to KTC5001D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
-30
-20
-6
-10
-15
-2
1.0
10
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0 +_ 0.2
D
1.10+_ 0.2
P
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0 +_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
BVCBO
BVCEO
BVEBO
hFE (1) (Note)
hFE (2)
VCE(sat)
VBE(sat)
fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification GR:180~390.
TEST CONDITION
VCB=-20V
VEB=-5V
IC=-50 A
IC=-1mA
IE=-50 A
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4.0A
IC=-4.0A, IB=-0.05A
IC=-4A, IB=-0.05A
VCE=-5V, IE=1.5A, f=50MHz
VCB=-10V, IE=0, f=1MHz
IPAK
MIN.
-
-
-30
-20
-6
180
82
-
-
-
-
TYP.
-
-
-
-
-0.16
-0.9
150
220
MAX.
-10
-10
390
-
-0.25
-1.2
-
-
UNIT
A
A
V
V
V
V
V
MHz
pF
2003. 3. 27
Revision No : 5
1/3
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