KTA1807D_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE SWITCHING.
POWER SUPPLY SWITCHING FOR TELEPHONES.
FEATURES
High Voltage : V_CEO=-600V.
High Speed Switching Time.
: t_f 1.0 s (I_C=-0.5A)
Low Collector Emitter Saturation Voltage.
: V_CE(sat)=-0.28V (I_C=-0.3A, I_B=-60mA)
Wide Safe Operating Area (SOA).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltag
Collector Current
DC
Pulse *
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* PW 10ms, Duty Cycle 50%.
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
-600
-600
-7
-1.0
-2.0
1.0
150
-55 150
UNIT
V
V
V
A
W
KTA1807D/L
TRIPLE DIFFUSED PNP TRANSISTOR
A
C
H
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
FF
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
D
1.10+_ 0.2
P
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5+_ 0.1
L
K
2.0+_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
IPAK
2003. 3. 27
Revision No : 2
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