KTA1759 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Breakdown Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
P_C*
T_j
-400
-400
-7
-100
500
1
150
Storage Temperature Range
T_stg
-55 150
P_C* : Mounted on Ceramic Substrate (250 ² 0.85)
UNIT
V
V
V
mA
mW
W
KTA1759
EPITAXIAL PLANAR PNP TRANSISTOR
A
H
D
D
K
FF
123
C
G
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut off Current
Emitter Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)2
Base-Emitter Saturation Voltage
*
V_BE(sat)
*Pulse Test : Pulse Width 300 S, Duty Cycle 2%
TEST CONDITION
I_C=-50 A, I_E=0
I_C=-1mA, I_B=0
I_E=-50 A, I_C=0
V_CB=-400V, I_E=0
V_EB=-6V, I_C=0
V_CE=-10V, I_C=-10mA
I_C=-20mA, I_B=-2mA
I_C=-20mA, I_B=-2mA
MIN.
-400
-400
-7.0
-
-
50
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
-10
-10
300
-0.5
-1.5
UNIT
V
V
V
A
A
V
V
2008. 9. 23
Revision No : 0
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