KTA1725 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

SEMICONDUCTOR
TECHNICAL DATA
KTA1725
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTC4511.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-80
-80
-6
-6
-3
30
150
-55 150
UNIT
V
V
V
A
A
W
A
C
U
E
L
L
M
D
D
NN
T
T
123
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C
2.70 0.30
S
D
0.85 MAX
E
3.20 0.20
F
3.00 0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60 0.50
K
3.90 MAX
L
1.20
V
M
1.30
N
2.54
O
4.50 0.20
P
6.80
Q
2.60 0.20
H
R
10
S
25
T
5
U
0.5
V 2.60 0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE(Note)
V_CE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification R:55~110, O:80~160.
TEST CONDITION
V_CB=-80V, I_E=0
V_EB=-6V, I_C=0
I_C=-25mA, I_B=0
V_CE=-4V, I_C=-2A
I_C=-2A, I_B=-0.2A
V_CE=-12V, I_C=-0.5A
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-80
55
-
-
-
TYP.
-
-
-
-
-
20
150
MAX.
-10
-10
-
160
-0.5
-
-
UNIT
A
A
V
V
MHz
pF
2002. 6. 5
Revision No : 0
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