KTA1704_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
HIGH FREQUENCY POWER AMPLIFIER
FEATURES
Complementary to KTC2803.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse (Note1)
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note 1 : Pulse Width 10mS, Duty Cycle 50%
RATING
-120
-120
-5
-1.2
-2.5
-0.3
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
KTA1704
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) Note
h_FE(2)
f_T
C_ob
V_CE(sat)
V_CB=-50V, I_E=0
V_EB=-4V, I_C=0
I_C=-10 A, I_E=0
I_C=-1mA, I_B=0
I_E=-10 A, I_C=0
V_CE=-5V, I_C=-50mA
V_CE=-5V, I_C=-500mA
V_CE=-10V, I_C=-50mA
V_CB=-10V, I_E=0, f=1MHz
I_C=-500mA, I_B=-50mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=-500mA, I_B=-50mA
(Note) : h_FE(1) Classification Y:100 200, GR:160 320
MIN.
-
-
-120
-120
-5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
110
30
-0.15
-0.85
MAX.
-1
-1
-
-
-
320
-
-
-
-0.4
-1.2
UNIT
A
A
V
V
V
MHz
pF
V
V
2003. 7. 24
Revision No : 4
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