English
Language : 

KTA1703_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
DC-DC CONVERTER.
LOW POWER SWITCHING REGULATOR.
FEATURES
hHigh Breakdown Voltage.
: VCEO=-400V
hLow Collector Saturation Voltage
: VCE(sat)=-1V(max.), (IC=-100mA, IB=-10mA)
hHigh Speed Switching.
KTA1703
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
DC
IC
Collector Current
Pulse
ICP
Base Current
Collector Power
Dissipation
IB
Ta=25
PC
Tc=25
Junction Temperature
Tj
Storage Temperature
Tstg
RATING
-400
-400
-7
-0.5
-1
-0.25
1.5W
10W
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Switching Time
Storage Time
V(BR)CBO
V(BR)CEO
ICBO
IEBO
hFE (Note)
VCE(sat)
VBE(sat)
tON
tstg
Fall Time
tf
Note : hFE Classification O:60q120, Y:100q200
TEST CONDITION
IC=-100ǺA, IE=0
IC=-1mA, IB=0
VCB=-400V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-100mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
IC=-100mA, RL=1.5kʃ
IB1=-10mA, IB2=20mA
VCC=-150V
MIN.
-400
-400
-
-
60
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-10
-10
200
-1
-1.2
1
4
1
UNIT
V
ǺA
-
V
ǺS
2003. 7. 24
Revision No : 6
1/2