KTA1700_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.).
Complementary to KTC2800.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-160
-160
-5
-1.5
-0.3
1.5
10
150
-55 150
UNIT
V
V
V
A
A
W
KTA1700
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE(Note)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
Note : h_FE Classification O:70~140,
C_ob
Y:120~240
TEST CONDITION
V_CB=-160V, I_E=0
V_EB=-5V, I_C=0
I_C=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=-5V, I_C=-100mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-500mA
V_CE=-10V, I_C=-100mA
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-160
-5.0
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
MAX.
-1.0
-1.0
-
-
240
-1.5
-1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2004. 3. 22
Revision No : 4
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