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KTA1666_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
SEMICONDUCTOR
TECHNICAL DATA
KTA1666
EPITAXIAL PLANAR PNP TRANSISTOR
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
ᴌLow Saturation Voltage
: VCE(sat)=-0.5V(Max.) (IC=-1A)
ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.)
ᴌPC=1ᴕ2W (Mounted on Ceramic Substrate)
ᴌSmall Flat Package.
ᴌComplementary to KTC4379.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
-50
VCEO
-50
VEBO
-5
IC
-2
IB
-0.4
PC
500
PC *
1
Tj
150
Storage Temperature Range
Tstg
-55ᴕ150
PC* : KTA1666 mounted on ceramic substrate (250mm2x0.8t)
UNIT
V
V
V
A
A
mW
W
á´±
á´±
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (1) (Note2)
hFE (2)
VCE(sat)
VBE(sat)
fT
Cob
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-2V, IC=-0.5A (Note 1)
VCE=-2V, IC=-1.5A (Note 1)
IC=-1A, IB=-0.05A (Note 1)
IC=-1A, IB=-0.05A (Note 1)
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
-50
70
40
-
-
-
-
TYP. MAX. UNIT
-
-0.1 ỌA
-
-0.1 ỌA
-
-
V
-
240
-
-
-
-0.5
V
-
-1.2
V
120
-
MHz
40
-
pF
Switching
Time
Turn-on Time
Storage Time
Fall Time
ton
I B2
0
IB1
INPUT IB2
tstg
IB1
20µsec
OUTPUT
-
0.1
-
-
1.0
-
ỌS
tf
-IB1=IB2=0.05A
DUTY CYCLE <= 1%
VCC =-30V
-
0.1
-
Note 1 : Pulse width⏊300ỌS, Duty Cycle⏊2%
Note 2 : hFE(1) Classification 0:70ᴕ140, Y:120ᴕ240
1998. 6. 15
Revision No : 2
1/3
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