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| KTA1664_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors | |||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
á´1W (Mounted on Ceramic Substrate).
á´Small Flat Package.
á´Complementary to KTC4376.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
PC*
Tj
-35
-30
-5
-800
-160
500
1
150
Storage Temperature Range
Tstg
-55á´150
PC* : KTA1664 mounted on ceramic substrate (250mm2x0.8t)
UNIT
V
V
V
mA
mA
mW
W
á´±
á´±
KTA1664
EPITAXIAL PLANAR PNP TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:100á´200, Y:160á´320
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
1998. 6. 15
Revision No : 2
MIN.
-
-
-30
100
35
-
-0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-100
-100
-
320
-
-0.7
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1/2
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