KTA1661 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
High Voltage : V_CEO=-120V.
High Transition Frequency : f_T=120MHz(Typ.).
1W(Monunted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4373.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
-120
Collector-Emitter Voltage
V_CEO
-120
Emitter-Base Voltage
V_EBO
-5
Collector Current
I_C
-800
Base Current
I_B
-160
Collector Power Dissipation
P_C
500
P_C*
1
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55 150
P_C* : KTA1661 mounted on ceramic substrate (250mm²x0.8t)
UNIT
V
V
V
mA
mA
mW
W
KTA1661
EPITAXIAL PLANAR PNP TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE (Note)
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:80 160, Y:120 240
TEST CONDITION
V_CB=-120V, I_E=0
V_EB=5V, I_C=0
I_C=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=-5V, I_C=-100mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-500mA
V_CE=-5V, I_C=-100mA
V_CB=-10V, I_E=0, f=1MHz
1998. 6. 15
Revision No : 2
MIN.
-
-
-120
-5.0
80
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
-
MAX.
-100
-100
-
-
240
-1.0
-1.0
-
30
UNIT
nA
nA
V
V
V
V
MHz
pF
1/2