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KTA1572 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
-120
-100
-5
-1
-3
-300
1
150
-55 150
UNIT
V
V
V
A
mA
W
KTA1572
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
S
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
0.35 MIN
L
0.75+_ 0.10
M
4
N
25
HO
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
N
N
1. EMITTER
2. COLLECTOR
3. BASE
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
V(BR)CBO
Collector-Emitter Breakdown Voltage ** V(BR)CEO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector-Emitter Cut-Off Current
ICES
VCE(sat) (1)
Collector-Emitter Saturation Voltage ** VCE(sat) (2)
VCE(sat) (3)
Base-Emitter Saturation Voltage **
VBE(sat)
Base-Emitter Voltag
VBE
hFE(1)
DC Current Gain **
hFE(2)
hFE(3)
hFE(4)
Transition Frequency
fT
Collector Output Capacitance
Cob
** Pulse Width = 300 S, Duty Cycle 2%.
TEST CONDITION
IC=-100 A
IC=-1mA
IE=-100 A
VCB=-80V, IE=0A
VEB=-4V, IC=0A
VCES=-80V, VBE=0V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
VCE=-5V, IC=-250mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
2010. 6. 4
Revision No : 0
MIN.
-120
-100
-5
-
-
-
-
-
-
-
-
150
150
150
125
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17
MAX.
-
-
-
-100
-100
-100
-0.12
-0.18
-0.32
-1.1
-1.0
-
-
450
-
-
-
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
1/3
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