English
Language : 

KTA1553T Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS AND STROBES APPLICATION.
FEATURES
ᴌAdoption of MBIT Processes.
ᴌHigh Current Capacitance.
ᴌLow Collector-to-Emitter Saturation Voltage.
ᴌUltrasmall-Sized Package permitting applied sets to be
made small and slim.
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTC3553T.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
-50
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-6
DC
IC
-5
Collector Current
Pulse
ICP
-7
Base Current
IB
-1.2
Collector Power Dissipation
PC *
0.9
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
A
A
W
á´±
á´±
KTA1553T
EPITAXIAL PLANAR PNP TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
S M Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
TEST CONDITION
VCB=-40V, IE=0
VEB=-4V, IC=0
IC=-10ỌA, IE=0
IC=-1mA, IB=0
IE=-10ỌA, IC=0
IC=-2A, IB=-40mA
IC=-2A, IB=-40mA
VCE=-2V, IC=-500mA
VCE=-10V, IC=-500mA
VCB=-10V, f=1MHz
MIN.
-
-
-50
-50
-6
-
-
200
-
-
Swiitching
Time
Turn-On Time
Storage Time
Fall Time
ton
PW=20µs
DC <= 1%
IB1
IB2
INPUT
RB
tstg
50Ω VR
-
OUTPUT
24Ω
-
100µF
470µF
tf
VBE =5V
VCC =-12V
-
-20IB1=20IB2=IC =-2.5A
TYP.
-
-
-
-
-
-225
-0.80
-
250
50
39
225
25
MAX.
-0.1
-0.1
-
-
-
-450
-1.2
560
-
-
UNIT
ỌA
ỌA
V
V
V
mV
V
MHz
pF
-
-
nS
-
2001. 6. 28
Revision No : 0
1/3