KTA1532U Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTA1532U
EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY AMPLIFIER DRIVER
FEATURES
hA Collector Current is large.
hCollector Saturation Voltage is low.
V_CE(sat) † -200mV at I_C=500mA, I_D=-25mA.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
V_CBO
-15
V
Collector-Emitter Voltage
V_CEO
-12
V
Emitter-Base Voltage
V_EBO
-6
V
DC
I_C
Collector Current
Pulse
I_CP
-1.5
A
-3
Collector Power Dissipation
P_C*
0.2
W
Junction Temperature
T_j
150

Storage Temperature Range
T_stg
-55q150 
* Package Mounted on a Ceramic Board ( 600mm²Âƒ0.8mm)
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2
B
1.25+_ 0.15
1
3
C
0.90+_ 0.10
D 0.3+0.10/-0.05
E
2.10 +_ 0.20
G
0.65
P
H 0.15+0.1/-0.06
J
1.30
K
0.00~0.10
L
H
M
0.70
0.42 +_0.10
N
K
N
N
0.10 MIN
P
0.1 MAX
1. EMITTER
2. BASE
3. COLLECTOR
USM
MARKING
Type Name
2A
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
h_FE
f_T
V_CB=-15V, I_E=0
V_EB=-6V, I_C=0
I_C=-10ǺA, I_E=0
I_C=-1mA, I_B=0
I_E=-10ǺA, I_C=0
I_C=-500mA, I_B=-25mA
V_CE=-2V, I_C=-200mA
V_CE=-2V, I_E=200mA, f=100MHz*
Collector Output Capacitance
C_ob
V_CB=-10V, f=1MHz
*Pulsed
2008. 7. 8
Revision No : 0
MIN.
-
-
-15
-12
-6
-
270
-
-
TYP.
-
-
-
-
-
-110
-
400
12
MAX.
-0.1
-0.1
-
-
-
-200
680
-
-
UNIT
ǺA
ǺA
V
V
V
mV
MHz
pF
1/2