KTA1531T Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
ᴌLow Saturation Voltage
: V_CE(sat)=0.3V(Max.) at I_C=0.5A.
ᴌComplementary to KTC3531T.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
V_CBO
-30
V_CEO
-20
V_EBO
-5
I_C
-1
P_C *
0.9
T_j
150
Storage Temperature Range
T_stg
-55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
A
W
á´±
á´±
KTA1531T
EPITAXIAL PLANAR PNP TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
h_FE Rank
S A ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
V_CB=-20V, I_E=0
V_EB=-5V, I_C=0
V_CE=-2V, I_C=-50mA
V_CE=-2V, I_C=-1A(Pulse)
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-10V, I_C=-50mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification Y:120ᴕ240, GR(G):200ᴕ400
MIN.
-
-
120
30
-
-
-
-
TYP.
-
-
-
-
-0.15
-0.85
180
15
MAX.
-0.1
-0.1
400
-
-0.3
-1.2
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF-
2001. 6. 23
Revision No : 0
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