KTA1520S Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
KTA1520S
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
* Pulse Width = 300 S, Duty Cycle 2%.
RATING
-120
-100
-5
-1
-2
-200
150
150
-55 150
UNIT
V
V
V
A
mA
mW
Marking
KMH ^{Type Name}
Lot No.
E
L BL
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
DC Current Gain **
Transition Frequency
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
I_CES
V_CE(sat) (1)
V_CE(sat) (2)
V_BE(sat)
V_BE
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
f_T
C_ob
TEST CONDITION
I_C=-100 A
I_C=-10mA
I_E=-100 A
V_CB=-100V
V_EB=-4V
V_CES=-100V
I_C=-250mA, I_B=-25mA
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-1mA
V_CE=-5V, I_C=-1mA
V_CE=-5V, I_C=-250mA
V_CE=-5V, I_C=-500mA
V_CE=-5V, I_C=-1A
V_CE=-10V, I_C=-50mA, f=100MHz
V_CB=-10V, f=1MHz
2003. 2. 25
Revision No : 1
MIN.
-120
-100
-5
-
-
-
-
-
-
-
100
100
100
50
50
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-100
-100
-100
-0.2
-0.3
-1.1
-1.0
-
-
300
-
-
5
UNIT
V
V
V
nA
nA
nA
V
V
V
MHz
pF
1/2