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KTA1385D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
SEMICONDUCTOR
TECHNICAL DATA
KTA1385D/L
EPITAXIAL PLANAR PNP TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.3W(Ta=25 )
Complementary to KTC5103D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING
-60
-60
-7
-5
-8
-1
1.0
15
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0 +_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0 +_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
ICBO
IEBO
hFE 1
hFE2 (Note)
hFE 3
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=-50V, IE=0
VEB=-7V, IC=0
VCE=-1V, IC=-0.1A
VCE=-1V, IC=-2A
VCE=-2V, IC=-5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
Switching
Time
Turn On Time
Storage Time
ton
0
I B2
INPUT
IB1
tstg
IB1
IB2
20µsec
Fall Time
tf
-IB1=IB2=0.2A
DUTY CYCLE <= 1%
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) hFE(2) Classification : O:160 320, Y:200 400.
OUTPUT
VCC =-10V
IPAK
MIN.
-
-
60
160
50
-
-
TYP.
-
-
-
-
-
-0.14
-0.9
-
0.15
MAX.
-10
-10
-
400
-
-0.3
-1.2
1
UNIT
A
A
V
V
-
0.78
2.5
S
-
0.18
1
2003. 3. 27
Revision No : 3
1/3
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