KTA1381 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V_CEO 300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C_re=2.3pF (V_CB=30V, f=1MHz)
Complementary KTC3503.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
V_CBO
V_CEO
V_EBO
I_C
I_CP
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-300
-300
-5
-100
-200
1.5
7
150
-55 150
UNIT
V
V
V
mA
W
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Collector Output Capacitance
Reverse Transfer Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Base-Emitter Breakdown Voltage
Note : h_FE Classification O:60 120, Y:100
I_CBO
I_EBO
h_FE (Note)
f_T
C_ob
C_re
V_CE(sat)
V_BE(sat)
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
200
TEST CONDITION
V_CB=-200V, I_E=0
V_EB=-4V, I_C=0
V_CE=-10V, I_C=-10mA
V_CE=-30V, I_C=-10mA
V_CB=-30V, I_E=0, f=1MHz
V_CB=-30V, I_E=0, f=1MHz
I_C=-20mA, I_B=-2mA
I_C=-20mA, I_B=-2mA
I_C=-10 A, I_E=0
I_C=-1mA, I_B=0
I_E=-10 A, I_C=0
MIN.
-
-
60
-
-
-
-
-
-300
-300
-5
TYP.
-
-
-
150
3.1
2.3
-
-
-
-
-
MAX.
-0.1
-0.1
200
-
-
-
-0.6
-1.0
-
-
-
UNIT
A
A
MHz
pF
pF
V
V
V
V
V
2003. 7. 24
Revision No : 3
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