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| KTA1296 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (POWER AMPLIFIER, POWER SWITCHING) | |||
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SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
hLow Saturation Voltage.
: VCE(sat)=-0.5V(Max.) at IC=-2A
hComplementary to KTC3266.
KTA1296
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
-20
-20
-6
-2
-0.5
625
150
-55q150
UNIT
V
V
V
A
A
mW
Â
Â
ELECTRICAL CHARACTERISTICS (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE(1) (Note)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification Y:120q240, GR:200q400
TEST CONDITION
VCB=-20V, IE=0
VEB=-6V, IC=0
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
IC=-2A, IB=-0.1A
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
120
40
-
-
-
-
TYP.
-
-
-
-
-
-
120
40
MAX.
-0.1
-0.1
400
-
-0.5
-0.85
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2000. 11. 30
Revision No : 0
1/2
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