KTA1281_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATIONS.
POWER SWITCHING APPLICATIONS.
FEATURES
hLow Collector Saturation Voltage
: V_CE(sat)=-0.5V(Max.) (I_C=-1A)
hHigh Speed Switching Time : t_stg=1.0ǺS(Typ.)
hComplementary to KTC3209.
KTA1281
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-50
-50
-5
-2
1
150
-55q150
UNIT
V
V
V
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE (1)(Note)
h_FE (2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
I_C=-10mA, I_B=0
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-1.5A
I_C=-1A, I_B=-0.05A
I_C=-1A, I_B=-0.05A
V_CE=-2V, I_C=-0.5A
V_CB=-10V, I_E=0, f=1MHz
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
Note : h_FE Classification 0:70q140, Y:120q240
2014. 12. 09
Revision No : 1
MIN.
-
-
-50
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
40
MAX.
-0.1
-0.1
-
240
-
-0.5
-1.2
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
-
0.1
-
-
1.0
-
ǺS
-
0.1
-
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