KTA1279 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE)

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
KTA1279
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
-300
-300
-5.0
-500
500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
V_(BR)CBO
V_(BR)CEO
DC Current Gain
h_FE *
Collector-Emitter Saturation Voltage
V_CE(sat) *
Base-Emitter Saturation Voltage
V_BE(sat) *
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note :* Pulse test : PWᴪ300ỌS, Duty Cycle⏊2%
TEST CONDITION
I_C=-100ỌA, I_E=0
I_C=-1.0mA, I_B=0
I_C=-1.0mA, V_CE=-10V
I_C=-10mA, V_CE=-10V
I_C=-30mA, V_CE=-10V
I_C=-20mA, I_B=-2.0mA
I_C=-20mA, I_B=-2.0mA
V_CE=-20V, I_C=-10mA, f=100MHz
V_CB=-20V, I_E=0, f=1MHz
MIN.
-300
-300
25
40
25
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
-
-0.5
-0.9
-
6.0
UNIT
ỌA
ỌA
V
V
MHz
V
1994. 6. 15
Revision No : 0
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