KTA1277 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, DC-DC CONVERTER, LOW POWER SWITCHING REGULATOR)

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
DC-DC CONVERTER.
LOW POWER SWITCHING REGULATOR.
FEATURES
ᴌHigh Breakdown Voltage.
ᴌLow Collector Saturation Voltage.
ᴌHigh Speed Switching.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
-400
-400
-7
-0.5
1
150
-55ᴕ150
UNIT
V
V
V
A
W
á´±
á´±
KTA1277
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cutoff Current
Emitter Cutoff Current
Collector Base Voltage
Collector Emitter Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Switching Time
Storage Time
Fall Time
Note : h_FE Classification O:60~120,
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
h_FE (Note)
V_CE(sat)
V_BE(sat)
t_on
t_stg
t_f
Y:100~200
TEST CONDITION
V_CB=-400V
V_EB=-5V
I_C=-100ỌA
I_C=-1mA
V_CE=-5V, I_C=-100mA
I_C=-100mA, I_B=-10mA
I_C=-100mA, I_B=-10mA
I_C=-100mA, R_L=1.5ká½µ
I_B1=-10mA, I_B2=20mA
V_CC=-150V
MIN.
-
-
-400
-400
60
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
-10
-10
-
-
200
-1
-1.2
1
4
1
UNIT
ỌA
V
-
V
ỌS
1995. 8. 28
Revision No : 0
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