KTA1274 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
hComplementary to KTC3227.
KTA1274
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-80
-80
-5
-400
-100
1
150
-55q150
UNIT
V
V
V
mA
mA
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter-Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE(1) (Note)
h_FE(2)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:70~140, Y:120~240.
TEST CONDITION
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
I_C=-5mA, I_B=0
V_CE=-2V, I_C=-50mA
V_CE=-2V, I_C=-200mA
I_C=-200mA, I_B=-20mA
V_CE=-2V, I_C=-5mA
V_CE=-10V, I_C=-10mA
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-80
70
40
-
-0.55
-
-
TYP.
-
-
-
-
-
-
-
100
14
MAX.
-100
-100
-
240
-
-0.4
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2012. 6. 8
Revision No : 2
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