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| KTA1271 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT) | |||
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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
á´High hFE : hFE=100á´320.
á´Complementary to KTC3203.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
-35
-30
-5
-800
800
625
150
-55á´150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTA1271
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : hFE(1) Classification 0:100á´200,
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
Y:160á´320
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
-30
100
35
-
-0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-100
-100
-
320
-
-0.7
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1998. 12. 26
Revision No : 2
1/2
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