KTA1270_07 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=-6V, I_C=-400mA.
Complementary to KTC3202.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-35
-30
-5
-500
500
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTA1270
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.30
+0.10
- 0.05
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2) (Note)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification 0:70 140, Y:120 240
h_FE(2) Classification 0:25Min., Y:40Min.
TEST CONDITION
V_CB=-35V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-6V, I_C=-400mA
I_C=-100mA, I_B=-10mA
V_CE=-1V, I_C=-100mA
V_CE=-6V, I_C=-20mA
V_CB=-6V, I_E=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-
-0.25
-1.0
-
-
UNIT
A
A
V
V
MHz
pF
2007. 6. 8
Revision No : 1
1/2