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| KTA1270 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) | |||
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
hComplementary to KTC3202.
KTA1270
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-35
-30
-5
-500
-100
625
150
-55q150
UNIT
V
V
V
mA
mA
mW
Â
Â
ELECTRICAL CHARACTERISTICS (Ta=25Â)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1) (Note)
hFE(2) (Note)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE(1) Classification 0:70q140, Y:120q240
hFE(2) Classification 0:25Min., Y:40Min.
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-6V, IC=-400mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-
-0.25
-1.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2012. 6. 8
Revision No : 2
1/2
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