KTA1268_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
hLow Noise.
: NF=3dB(Typ.), Rg=100ʃ, V_CE=-6V, I_C=-100ǺA, f=1kHz
: NF=0.5dB(Typ.), Rg=1kʃ, V_CE=-6V, I_C=-100ǺA, f=1kHz.
hHigh DC Current Gain : h_FE=200q700.
hHigh Voltage : V_CEO=-120V.
hLow Pulse Noise. Low 1/f Noise.
hComplementary to KTC3200.
KTA1268
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-120
-120
-5
-100
-50
625
150
-55q150
UNIT
V
V
V
mA
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=-120V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
-
Collector-Emitter Breakdown Voltage
V_(BR)CEO I_C=-1mA, I_B=0
-120
DC Current Gain
h_FE(Note) V_CE=-6V, I_C=-2mA
200
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=-10mA, I_B=-1mA
-
Base-Emitter Voltage
V_BE
V_CE=-6V, I_C=-2mA
-
Transition Frequency
f_T
V_CE=-6V, I_C=-1mA
-
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
-
V_CE=-6V, I_C=-100ǺA, f=10Hz, Rg=10kʃ -
Noise Figure
NF
V_CE=-6V, I_C=-100ǺA, f=1kHz, Rg=10kʃ -
V_CE=-6V, I_C=-100ǺA f=1kHz, Rg=100ʃ
-
Note : h_FE Classification GR:200q400, BL:350q700
TYP.
-
-
-
-
-
-0.65
100
4.0
-
-
3.0
MAX.
-100
-100
-
700
-0.3
-
-
-
6.0
2.0
-
UNIT
nA
nA
V
V
V
MHz
pF
dB
2012. 6. 8
Revision No : 1
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