KTA1266 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(2)=80(Typ.) at V_CE=-6V, I_C=-150mA
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
hLow Noise : NF=1dB(Typ.). at f=1kHz.
hComplementary to KTC3198.
KTA1266
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
-50
-50
-5
-150
-50
Collector Power Dissipation
625
*P_C
400
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
UNIT
V
V
V
mA
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE(1) (Note) V_CE=-6V, I_C=-2mA
h_FE(2)
V_CE=-6V, I_C=-150mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-100mA, I_B=-10mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=-100mA, I_B=-10mA
Transition Frequency
f_T
V_CE=-10V, I_C=-1mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Base Intrinsic Resistance
rbb’
V_CB=-10V, I_E=1mA, f=30MHz
Noise Figure
NF
V_CE=-6V, I_C=-0.1mA, Rg=10kʃ, f=1kHz
Note : h_FE(1) Classification O:70q140, Y:120q240, GR:200q400
MIN.
-
-
70
25
-
-
80
-
-
-
TYP.
-
-
-
-
-0.1
-
-
4.0
30
1.0
MAX.
-0.1
-0.1
400
-
-0.3
-1.1
-
7.0
-
10
UNIT
ǺA
ǺA
V
V
MHz
pF
ʃ
dB
2013. 7. 08
Revision No : 4
1/2