KTA1243_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
ᴌh_FE=100ᴕ320 (V_CE=-2V, I_C=-0.5A).
ᴌh_FE=70(Min.) (V_CE=-2V, I_C=-4A).
ᴌLow Collector Saturation Voltage.
: V_CE(sat)=-0.5V (I_C=-3A, I_B=-75mA).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-35
-20
-8
-5
-0.5
625
150
-55ᴕ150
UNIT
V
V
V
A
A
mW
á´±
á´±
KTA1243
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:100ᴕ200, Y:160ᴕ320
TEST CONDITION
V_CB=-35V, I_E=0
V_EB=-8V, I_C=0
V_EB=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-4A
I_C=-3A, I_B=-75mA
V_CE=-2V, I_C=-4A
V_CE=-2V, I_C=-0.5A
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-20
-8
100
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
170
62
MAX.
-100
-100
-
-
320
-
-0.5
-1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1999. 1. 7
Revision No : 0
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