KTA1241_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
h_FE=100 320 (V_CE=-2V, I_C=-0.5A).
h_FE=70(Min.) (V_CE=-2V, I_C=-4A).
Low Collector Saturation Voltage.
: V_CE(sat)=-0.5V (I_C=-3A, I_B=-75mA).
High Power Dissipation : P_C=1W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-35
-20
-8
-5
-0.5
1
150
-55 150
UNIT
V
V
V
A
A
W
KTA1241
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=-35V, I_E=0
V_EB=-8V, I_C=0
I_C=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=-2V, I_C=-0.5A
V_CE=-2V, I_C=-4A
I_C=-3A, I_B=-75mA
V_CE=-2V, I_C=-4A
V_CE=-2V, I_C=-0.5A
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification O:100 200, Y:160 320
MIN.
-
-
-20
-8
100
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
170
62
MAX.
-100
-100
-
-
320
-
-0.5
-1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1994. 3. 23
Revision No : 0
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