KTA1225D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)

SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.).
Complementary to KTC2983D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-160
-160
-5
-1.5
-0.3
1.0
10
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0+_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
Emitter-Base Breakdown Voltage
V_(BR)EBO
DC Current Gain
h_FE(Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:70~140, Y:120~240
TEST CONDITION
V_CB=-160V, I_E=0
V_EB=-5V, I_C=0
I_C=-10mA, I_B=0
I_E=-1mA, I_C=0
V_CE=-5V, I_C=-100mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-500mA
V_CE=-10V, I_C=-100mA
V_CB=-10V, I_E=0, f=1MHz
IPAK
MIN.
-
-
-160
-5.0
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
MAX.
-1.0
-1.0
-
-
240
-1.5
-1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2003. 3. 27
Revision No : 2
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