KTA1073T Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL)

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE CONTROL APPLICATIONS.
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
FEATURES
High Voltage : V_CBO=-300V, V_CEO=-300V
Low Saturation Voltage : V_CE(sat)=-0.5V(Max.)
Small Collector Output Capacitance : C_ob=5.5pF(Typ.)
Complementary to KTC3207T.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
T_stg
-300
-300
-5
-100
-20
0.9
150
-55 150
* Package mounted on a ceramic board (600 0.8 )
UNIT
V
V
V
mA
mA
W
KTA1073T
EPITAXIAL PLANAR PNP TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
h_FE Rank
S X ^{Type Name}
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
h_FE(1)
h_FE(2) (Note)
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:50 150, Y:100~200
TEST CONDITION
V_CB=-300V, I_E=0
V_EB=-5V, I_C=0
I_C=-0.1mA, I_E=0
I_C=-1mA, I_B=0
V_CE=-10V, I_C=-1mA
V_CE=-10V, I_C=-20mA
I_C=-20mA, I_B=-2mA
I_C=-20mA, I_B=-2mA
V_CE=-10V, I_C=-20mA
V_CB=-20V, I_E=0, f=1MHz
2002. 11. 7
Revision No : 1
MIN.
-
-
-300
-300
30
50
-
-
50
-
TYP.
-
-
-
-
-
-
-
-
55
5.5
MAX.
-0.1
-0.1
-
-
-
200
-0.5
-1.2
-
6.0
UNIT
A
A
V
V
V
V
MHz
pF
1/3