KTA1070 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT)

SEMICONDUCTOR
TECHNICAL DATA
HIGH-DEFINITION CRT DISPLAY
VIDEO OUTPUT APPLICATION.
FEATURES
ᴌHigh Voltage : V_CEO=-200V.
ᴌHigh Transition Frequency : f_T=150MHz(Typ.).
ᴌLow Collector Output Capacitance : C_ob=2.6pF(Typ.).
ᴌComplementary to KTC3467.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_cp
P_C
T_j
Storage Temperature Range
T_stg
RATING
-200
-200
-5
-100
-200
1
150
-55ᴕ150
UNIT
V
V
V
mA
W
á´±
á´±
KTA1070
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Reverse Transfer Capacitance
C_re
Note : h_FE Classification 0:70ᴕ140 , Y:120ᴕ240
TEST CONDITION
V_CB=-150V, I_E=0
V_EB=-4V, I_C=0
I_C=-1mA, I_B=0
V_CE=-5V, I_C=-10mA
I_C=-20mA, I_B=-2mA
I_C=-20mA, I_B=-2mA
V_CE=-30V, I_C=-10mA
V_CB=-30V, I_E=0, f=1MHz
V_CB=-30V, I_E=0, f=1MHz
MIN.
-
-
-200
70
-
-
-
-
-
TYP.
-
-
-
-
-
-
150
2.6
1.7
MAX.
-0.1
-0.1
-
240
-0.6
-1.0
-
-
-
UNIT
ỌA
ỌA
V
-
V
V
MHz
pF
pF
1999. 11. 30
Revision No : 1
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