KTA1050 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTA1050
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
hLow Collector-Emitter Saturation Voltage
: V_CE(sat)=-2.0V(Max.).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-100
-100
-5
-5
-0.5
30
150
-55q150
UNIT
V
V
V
A
A
W


A
E
L
M
D
NN
123
C
R
H
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q
4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
I_C=-50mA, I_B=0
V_CE=-5V, I_C=-1A
V_CE=-5V, I_C=-4A
I_C=-4A, I_B=-0.4A
V_CE=-5V, I_C=-4A
V_CE=-5V, I_C=-1A
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:70q140 , Y:120q240
V_CB=-10V, I_E=0, f=1MHz
2014. 3. 20
Revision No : 0
MIN.
-
-
-100
70
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
30
90
MAX.
-100
-1
-
240
-
-2.0
-1.5
-
-
UNIT
ǺA
mA
V
V
V
MHz
pF
1/2