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KTA1040D Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, DPAK FOR SVRFACE MOUNT)
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DPAK FOR SURFACE MOUNT APPLICATIONS.
FEATURES
hLow Collector Saturation Voltage
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A.
hStraight Lead (IPAK, "L" Suffix)
hComplementary to KTC2020D/L.
KTA1040D/L
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power
Ta=25
PC
Dissipation
Tc=25
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
-60
-60
-7
-3
-0.5
1.0
20
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(1)(Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
TEST CONDITION
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-3A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
Turn-on Time
ton
Switching Time Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification Y:100~200, GR:150~300.
2003. 3. 27
Revision No : 5
MIN.
-
-
-60
100
20
-
-
-
-
-
TYP.
-
-
-
-
-
-0.25
-0.7
30
45
MAX.
-100
-100
-
300
-
-1.0
-1.0
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
0.4
-
-
1.7
-
ǺS
-
0.5
-
1/2