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KTA1001_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors
SEMICONDUCTOR
TECHNICAL DATA
CAMERA STROBO FLASH APPLICATION.
HIGH CURRENT APPLICATION.
FEATURES
hFE=100 320 (VCE=-2V, IC=-0.5A).
hFE=70(Min.) (VCE=-2V, IC=-3A).
Low Collector Saturation Voltage.
: VCE(sat)=-0.5V(Max.) (IC=-3A, IB=-75mA).
High Power Dissipation.
: PC=1W(Tc=25 ), PC=0.5W(Ta=25 ).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-35
Collector-Emitter Voltage
VCEO
-20
Emitter-Base Voltage
VEBO
-8
DC
IC
-3
Collector Current
Pulse (Note1)
ICP
-5
Base Current
IB
-0.5
Collector Power Ta=25
0.5
Dissipation
Tc=25 *
PC
1
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Note1 : Pulse Test : Pulse width=10ms(Max.)
Duty cycle=30%(Max.)
*Pc : KTA1001 mounted on ceramic substrate(250mm2x0.8t)
UNIT
V
V
V
A
A
A
W
KTA1001
EPITAXIAL PLANAR PNP TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
hFE Rank
Type Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
VCB=-35V, IE=0
IEBO
VEB=-8V, IC=0
V(BR)CEO
IC=-10mA, IB=0
V(BR)EBO
IE=-1mA, IC=0
hFE(1) (Note2) VCE=-2V, IC=-0.5A
hFE(2)
VCE=-2V, IC=-3A
VCE(sat)
IC=-3A, IB=-75mA
VBE
VCE=-2V, IC=-3A
fT
VCE=-2V, IC=-0.5A
Cob
VCB=-10V, IE=0, f=1MHz
Note2 : hFE(1) Classification 0:100 200, Y:160 320
1994. 3. 21
Revision No : 0
MIN.
-
-
-20
-8
100
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
170
62
MAX.
-100
-100
-
-
320
-
-0.5
-1.5
-
-
UNIT
nA
nA
V
V
V
V
MHz
pF
1/2