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KRX208E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SEMICONDUCTOR
SEMICONDUCTOR
TECHNICAL DATA
KRX208E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1
OUT
R1
IN
R2
COMMON
Q2
R1
IN
OUT
Q1
R1=47KΩ
R2=47KΩ
R2
COMMON
Q2
R1=4.7KΩ
R2=10KΩ
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
E
E
0.35+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
6
5
4
6
5
4
Q1
Q2
BW Type Name
Lot No.
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
1
2
3
SYMBOL
VO
VI
IO
RATING
50
40, -10
100
1
2
3
UNIT
V
V
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
SYMBOL
VO
VI
IO
SYMBOL
PD *
Tj
Tstg
RATING
-50
-20, 7
-100
RATING
200
150
-55 150
UNIT
V
V
UNIT
2014. 3. 31
Revision No : 2
1/3