English
Language : 

KRX206E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SEMICONDUCTOR
SEMICONDUCTOR
TECHNICAL DATA
KRX206E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
hIncluding two devices in TES6.
(Thin Extreme Super mini type with 6 Pin.)
hWith Built-in bias resistors.
hSimplify circuit design.
hReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1
OUT
R1
IN
R2
COMMON
Q2
OUT
R1
IN
R2
Q1 , Q 2
R1=10KΩ
R2=47KΩ
COMMON
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
E
E
0.35+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
Q1 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
Marking
6
5
4
BK Type Name
Lot No.
1
2
3
SYMBOL
VO
VI
IO
1
2
3
RATING
50
30, -6
100
UNIT
V
V
ɶ
Q2 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1, Q2 MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
SYMBOL
VO
VI
IO
SYMBOL
PD *
Tj
Tstg
RATING
-50
-30, 6
-100
RATING
200
150
-55q150
UNIT
V
V
ɶ
UNIT
É»


2014. 3. 31
Revision No : 3
1/3