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KRX202U Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
SEMICONDUCTOR
TECHNICAL DATA
KRX202U
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌIncluding two devices in US6.
(Ultra Super mini type with 6 leads.)
ᴌWith Built-in bias resistors.
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1
OUT
R1
IN
R2
COMMON
Q2
OUT
R1
IN
R2
Q1 , Q 2
R1=22KΩ
R2=22KΩ
COMMON
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q1 COMMON (EMITTER)
2. Q1 IN (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 OUT (COLLECTOR)
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Marking
Type Name
6
5
4
Q1 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1
Q2
1
2
3
SYMBOL
VO
VI
IO
BB
1
2
3
RATING
50
40, -10
100
UNIT
V
V
Ὠ
Q2 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q3 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
VO
VI
IO
SYMBOL
PD *
Tj
Tstg
RATING
-50
-40, 10
-100
RATING
200
150
-55ᴕ150
UNIT
V
V
Ὠ
UNIT
á½­
á´±
á´±
2002. 1. 24
Revision No : 3
1/3