KRX105U Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRX105U
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in USV.
(Ultra Super mini type with 5 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q₁
C
Q₂
R1
B
R1
B
E
C
R1=4.7KΩ
(Q₁, Q ₂ COMMON)
E
B
B1
1
5
DIM MILLIMETERS
A
2.00+_ 0.20
2
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C
0.65
D 0.2+0.10/-0.05
G
0-0.1
H
0.9 +_0.1
T
T 0.15+0.1/-0.05
G
1. Q ₁ COMMON (EMITTER)
2. Q ₁ IN (BASE)
3. Q ₂ COMMON (EMITTER)
4. Q ₂ OUT (COLLECTOR)
5. Q ₁ OUT (COLLECTOR)
Q ₂ IN (BASE)
USV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Q2
Q1
Marking
5
Type Name
4
BE
Q₁ MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q₂ MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q₁, Q₂ MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2002. 5. 8
Revision No : 2
1
2
3
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
SYMBOL
P_C *
T_j
T_stg
1
2
3
RATING
50
50
5
100
UNIT
V
V
V
RATING
-50
-50
-5
-100
UNIT
V
V
V
RATING
200
150
-55 150
UNIT
1/3