KRX105E Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRX105E
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌIncluding two devices in TESV.
(Thin Extreme Super mini type with 5 pin.)
ᴌWith Built-in bias resistors.
ᴌSimplify circuit design.
ᴌReduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q₁
C
Q₂
C
B
B1
1
5
DIM MILLIMETERS
A
1.6 +_ 0.05
A1
1.0+_ 0.05
2
B
1.6+_ 0.05
B1
1.2+_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
P
J
0.12+_ 0.05
P
5
R1
B
R1
B
E
R1=4.7KΩ
(Q₁, Q ₂ COMMON)
E
1. Q ₁ COMMON (EMITTER)
2. Q ₁ IN (BASE)
3. Q ₂ COMMON (EMITTER)
4. Q ₂ OUT (COLLECTOR)
5. Q ₁ OUT (COLLECTOR)
Q ₂ IN (BASE)
TESV
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Marking
5
Type Name
4
Q2
Q1
BE
Q1 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q2 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2002. 1. 24
Revision No : 1
1
2
3
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
SYMBOL
P_C *
T_j
T_stg
1
2
3
RATING
50
50
5
100
UNIT
V
V
V
Ὠ
RATING
-50
-50
-5
-100
UNIT
V
V
V
Ὠ
RATING
200
150
-55ᴕ150
UNIT
á½­
á´±
á´±
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