KRX102F Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN/PNP TRANSISTOR INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION

SEMICONDUCTOR
TECHNICAL DATA
KRX102F
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TFSV.
(Thin Fine Pitch Super mini 5pin Package.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q₁
OUT
R1
IN
R2
COMMON
Q₂
R1
IN
OUT
Q₁
R1=47KΩ
R2=47KΩ
R2
COMMON
Q₂
R1=10KΩ
R2=47KΩ
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
Marking
5
Type Name
4
B
B1
1
5
DIM MILLIMETERS
2
A
1.0+_ 0.05
A1
0.7+_ 0.05
3
B
1.0+_ 0.05
4
B1
0.8+_ 0.05
C
0.35
D
0.15+_ 0.05
H 0.38+0.02/-0.04
T
0.1+_ 0.05
1. Q ₁ COMMON (EMITTER)
2. Q ₁ IN (BASE)
3. Q ₂ COMMON (EMITTER)
4. Q ₂ OUT (COLLECTOR)
5. Q ₁ OUT (COLLECTOR)
Q ₂ IN (BASE)
TFSV
Q1
Q2
BM
1
2
3
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
2007. 4. 25
Revision No : 2
1
2
3
SYMBOL
V_CEO
V_EBO
I_C
SYMBOL
V_CEO
V_EBO
I_C
SYMBOL
P_D *
T_j
T_stg
RATING
20
10
50
RATING
-20
-6
-50
RATING
100
150
-55 150
UNIT
V
V
UNIT
V
V
UNIT
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