KRC881T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
FEATURES
High emitter-base voltage : V_EBO=25V(Min)
High reverse h_FE : reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-4mA)
Low on resistance : R_on=1 (Typ.) (I_B=5mA)
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
E
1
2
3
KRC881T~KRC886T
EPITAXIAL PLANAR NPN TRANSISTOR
E
K
B
K
1
6
2
5
3
4
H
J
J
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
TS6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
MARK SPEC
TYPE
KRC881T
KRC882T
KRC883T
KRC884T
KRC885T
KRC886T
h_FE classification
B
MQB
MRB
MSB
MTB
MUB
MVB
2002. 12. 5
Revision No : 2
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C *
T_j
T_stg
RATING
50
20
25
300
0.9
150
-55 150
UNIT
V
V
V
mA
W
Marking
65 4
h_FE Rank
Type Name
Lot No.
12 3
1/2