KRC860E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
KRC860E~KRC864E
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
EQUIVALENT CIRCUIT
C
R1
B
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
E
1
2
3
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q₁ EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
50
V_CEO
50
V_EBO
5
Collector Current
I_C
100
UNIT
V
V
V
mA
TES6
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating.
SYMBOL RATING
P_C *
200
T_j
150
T_stg
-55 150
UNIT
mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
-
DC Current Gain
h_FE
V_CE=5V, I_C=1mA
120
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=0.5mA
-
Transition Frequency
f_T *
V_CE=10V, I_C=5mA
-
KRC860E
-
KRC861E
-
Input Resistor
KRC862E
R₁
-
KRC863E
-
KRC864E
-
MARK SPEC
TYPE
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
Marking
65
MARK
NK
NM
NN
NO
NP
TYP.
-
-
-
0.1
250
4.7
10
100
22
47
MAX.
100
100
-
0.3
-
-
-
-
-
-
Type Name
4
UNIT
nA
nA
V
MHz
k
1 23
2002. 7. 10
Revision No : 2
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