KRC857U Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(ká½µ) R2(ká½µ)
KRC857U
10
47
KRC858U
22
47
KRC859U
47
22
KRC857U~KRC859U
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q₁ COMMON (EMITTER)
2. Q₁ IN (BASE)
3. Q₂ OUT (COLLECTOR)
4. Q₂ COMMON (EMITTER)
5. Q₂ IN (BASE)
6. Q₁ OUT (COLLECTOR)
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Output Voltage
KRC857Uᴕ859U
KRC857U
Input Voltage
KRC858U
KRC859U
Output Current
Power Dissipation
Junction Temperature
KRC857Uᴕ859U
Storage Temperature Range
* Total Rating.
MARK SPEC
TYPE
MARK
KRC857U
NH
KRC858U
NI
KRC859U
NJ
SYMBOL
V_O
V_I
I_O
P_D *
T_j
T_stg
1
2
3
RATING
50
30, -6
40, -7
40,-15
100
200
150
-55ᴕ150
Marking
Type Name
654
1 23
UNIT
V
V
mA
mW
á´±
á´±
2002. 1. 24
Revision No : 2
1/4